Spin resonance of electrons confined by SiGe nanostructures

被引：0

作者：

Lipps, F. ^{[1
]}

Pezzoli, F. ^{[1
]}

Stoffel, M. ^{[1
]}

Rastelli, A. ^{[1
]}

Kataev, V. ^{[1
]}

Schmidt, O. G. ^{[1
]}

Buechner, B. ^{[1
]}

机构：

[1] IFW Dresden, D-01171 Dresden, Germany

来源：

INTERNATIONAL CONFERENCE ON MAGNETISM (ICM 2009) | 2010年 / 200卷

关键词：

DONORS; RELAXATION; SILICON;

D O I：

10.1088/1742-6596/200/6/062010

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We performed electron spin resonance measurements at 9.56 GHz on SiGe nanostructures to study coherence and relaxation times of electron spins in Si confined by SiGe quantum dots. Multilayers of self-assembled SiGe quantum dots were grown by molecular beam epitaxy. With illumination below the Si bandgap the intensity of the ESR signal increases strongly. We discuss the relationship between structural parameters of the layers and resulting spin coherence and relaxation times of the confined spins as measured by ESR.

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页数：4

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