Effective passivation of Si surfaces by plasma deposited SiOx/a-SiNx:H stacks

被引：66

作者：

Dingemans, G. ^{[1
]}

Mandoc, M. M. ^{[1
]}

Bordihn, S. ^{[2
]}

van de Sanden, M. C. M. ^{[1
]}

Kessels, W. M. M. ^{[1
]}

机构：

[1] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands

[2] Q Cells SE, D-06766 Bitterfeld, Germany

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 22期

关键词：

SILICON SOLAR-CELLS; NITRIDE FILMS; RECOMBINATION; CHARGE; LAYERS; AL2O3;

D O I：

10.1063/1.3595940

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Very low surface recombination velocities <6 and <11 cm/s were obtained for SiOx/a-SiNx:H stacks synthesized by plasma-enhanced chemical vapor deposition on low resistivity n- and p-type c-Si, respectively. The stacks induced a constant effective lifetime under low illumination, comparable to Al2O3 on p-type Si. Compared to single layer a-SiNx:H, a lower positive fixed charge density was revealed by second-harmonic generation measurements, while field-effect passivation was absent for a reference stack comprising thermally grown SiO2. The results indicate that hydrogenation of interface states played a key role in the passivation and remained effective up to annealing temperatures >800 degrees C. (C)2011 American Institute of Physics. [doi: 10.1063/1.3595940]

引用

页数：3

共 25 条

[11] On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3 [J].

Hoex, B. ;

Gielis, J. J. H. ;

de Sanden, M. C. M. van ;

Kessels, W. M. M. .

JOURNAL OF APPLIED PHYSICS, 2008, 104 (11)

[12] Recent developments in rear-surface passivation at Fraunhofer ISE [J].

Hofmann, Marc ;

Janz, Stefan ;

Schmidt, Christian ;

Kambor, Stephan ;

Suwito, Dominik ;

Kohn, Norbert ;

Rentsch, Jochen ;

Preu, Ralf ;

Glunz, Stefan W. .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2009, 93 (6-7) :1074-1078

[13] Influence of the high-temperature "firing" step on high-rate plasma deposited silicon nitride films used as bulk passivating antireflection coatings on silicon solar cells [J].

Hong, J ;

Kessels, WMM ;

Soppe, WJ ;

Weeber, AW ;

Arnoldbik, WM ;

van de Sanden, MCM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (05) :2123-2132

[14] Recombination at the interface between silicon and stoichiometric plasma silicon nitride [J].

Kerr, MJ ;

Cuevas, A .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2002, 17 (02) :166-172

[15] Surface passivation of n-type Czochralski silicon substrates by thermal-SiO2/plasma-enhanced chemical vapor deposition SiN stacks [J].

Larionova, Yevgeniya ;

Mertens, Verena ;

Harder, Nils-Peter ;

Brendel, Rolf .

APPLIED PHYSICS LETTERS, 2010, 96 (03)

[16] Low temperature surface passivation for silicon solar cells [J].

Leguijt, C ;

Lolgen, P ;

Eikelboom, JA ;

Weeber, AW ;

Schuurmans, FM ;

Sinke, WC ;

Alkemade, PFA ;

Sarro, PM ;

Maree, CHM ;

Verhoef, LA .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1996, 40 (04) :297-345

[17] Detailed study of the composition of hydrogenated SiNx layers for high-quality silicon surface passivation [J].

Mäckel, H ;

Lüdemann, R .

JOURNAL OF APPLIED PHYSICS, 2002, 92 (05) :2602-2609

[18] Effective passivation of the low resistivity silicon surface by a rapid thermal oxide plasma silicon nitride stack [J].

Narasimha, S ;

Rohatgi, A .

APPLIED PHYSICS LETTERS, 1998, 72 (15) :1872-1874

[19] Surface passivation of high-efficiency silicon solar cells by atomic-layer-deposited Al2O3 [J].

Schmidt, J. ;

Merkle, A. ;

Brendel, R. ;

Hoex, B. ;

van de Sanden, M. C. M. ;

Kessels, W. M. M. .

PROGRESS IN PHOTOVOLTAICS, 2008, 16 (06) :461-466

[20] Carrier recombination at silicon-silicon nitride interfaces fabricated by plasma-enhanced chemical vapor deposition [J].

Schmidt, J ;

Aberle, AG .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (07) :3626-3633

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