Effective passivation of Si surfaces by plasma deposited SiOx/a-SiNx:H stacks

被引：66

作者：

Dingemans, G. ^{[1
]}

Mandoc, M. M. ^{[1
]}

Bordihn, S. ^{[2
]}

van de Sanden, M. C. M. ^{[1
]}

Kessels, W. M. M. ^{[1
]}

机构：

[1] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands

[2] Q Cells SE, D-06766 Bitterfeld, Germany

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 22期

关键词：

SILICON SOLAR-CELLS; NITRIDE FILMS; RECOMBINATION; CHARGE; LAYERS; AL2O3;

D O I：

10.1063/1.3595940

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Very low surface recombination velocities <6 and <11 cm/s were obtained for SiOx/a-SiNx:H stacks synthesized by plasma-enhanced chemical vapor deposition on low resistivity n- and p-type c-Si, respectively. The stacks induced a constant effective lifetime under low illumination, comparable to Al2O3 on p-type Si. Compared to single layer a-SiNx:H, a lower positive fixed charge density was revealed by second-harmonic generation measurements, while field-effect passivation was absent for a reference stack comprising thermally grown SiO2. The results indicate that hydrogenation of interface states played a key role in the passivation and remained effective up to annealing temperatures >800 degrees C. (C)2011 American Institute of Physics. [doi: 10.1063/1.3595940]

引用

页数：3

共 25 条

[1]

BEYER W, 2006, MRS S P, V910

[2] EVIDENCE FOR A NEGATIVE ELECTRON-ELECTRON CORRELATION-ENERGY IN THE DOMINANT DEEP TRAPPING CENTER IN SILICON-NITRIDE FILMS [J].

CURRY, SE ;

LENAHAN, PM ;

KRICK, DT ;

KANICKI, J ;

KIRK, CT .

APPLIED PHYSICS LETTERS, 1990, 56 (14) :1359-1361

[3] Experimental evidence of parasitic shunting in silicon nitride rear surface passivated solar cells [J].

Dauwe, S ;

Mittelstädt, L ;

Metz, A ;

Hezel, R .

PROGRESS IN PHOTOVOLTAICS, 2002, 10 (04) :271-278

[4] Influence of stoichiometry of direct plasma-enhanced chemical vapor deposited SiNx films and silicon substrate surface roughness on surface passivation -: art. no. 063303 [J].

De Wolf, S ;

Agostinelli, G ;

Beaucarne, G ;

Vitanov, P .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (06)

[5] Molecular hydrogen formation in hydrogenated silicon nitride [J].

Dekkers, H. F. W. ;

Beaucarne, G. ;

Hiller, M. ;

Charifi, H. ;

Slaoui, A. .

APPLIED PHYSICS LETTERS, 2006, 89 (21)

[6] Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film [J].

Dingemans, G. ;

van de Sanden, M. C. M. ;

Kessels, W. M. M. .

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2011, 5 (01) :22-24

[7] Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3 [J].

Dingemans, G. ;

Terlinden, N. M. ;

Pierreux, D. ;

Profijt, H. B. ;

van de Sanden, M. C. M. ;

Kessels, W. M. M. .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2011, 14 (01) :H1-H4

[8] Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks [J].

Dingemans, G. ;

Beyer, W. ;

van de Sanden, M. C. M. ;

Kessels, W. M. M. .

APPLIED PHYSICS LETTERS, 2010, 97 (15)

[9] Negative charge and charging dynamics in Al2O3 films on Si characterized by second-harmonic generation [J].

Gielis, J. J. H. ;

Hoex, B. ;

van de Sanden, M. C. M. ;

Kessels, W. M. M. .

JOURNAL OF APPLIED PHYSICS, 2008, 104 (07)

[10] High-Efficiency Crystalline Silicon Solar Cells [J].

Glunz, S. W. .

ADVANCES IN OPTOELECTRONICS, 2007, 2007

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