Theory and design of field-effect carbon nanotube transistors

被引：0
作者：
Pennington, G [1 ]
Goldsman, N [1 ]
机构：
[1] Univ Maryland, Dept Elect & Comp Engn, College Pk, MD 20742 USA
来源：
2003 IEEE INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES | 2003年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work we study the effects of the application of an electric field perpendicular to the axis of a Carbon nanotube. We find that such a field acts to lower the bandgap, and alter the wavefunctions around the circumference of the tube. We simulate the quantum transport properties of a resonant-tunneling FET as an application of these effects using the Wigner-function formalism. The results of our theoretical model indicate that the current in this device can be effectively manipulated by the gate potential.
引用
收藏
页码：167 / 170
页数：4
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