Theory and design of field-effect carbon nanotube transistors

被引：0

作者：

Pennington, G ^{[1
]}

Goldsman, N ^{[1
]}

机构：

[1] Univ Maryland, Dept Elect & Comp Engn, College Pk, MD 20742 USA

来源：

2003 IEEE INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES | 2003年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work we study the effects of the application of an electric field perpendicular to the axis of a Carbon nanotube. We find that such a field acts to lower the bandgap, and alter the wavefunctions around the circumference of the tube. We simulate the quantum transport properties of a resonant-tunneling FET as an application of these effects using the Wigner-function formalism. The results of our theoretical model indicate that the current in this device can be effectively manipulated by the gate potential.

引用

页码：167 / 170

页数：4

共 50 条

[31] Suppression of leakage current in carbon nanotube field-effect transistors
Xu, Lin
Qiu, Chenguang
Peng, Lian-mao
Zhang, Zhiyong
NANO RESEARCH, 2021, 14 (04) : 976 - 981
[32] Lateral scaling in carbon-nanotube field-effect transistors
Wind, SJ
Appenzeller, J
Avouris, P
PHYSICAL REVIEW LETTERS, 2003, 91 (05)
[33] Carbon nanotube multi-channeled field-effect transistors
Chen, Changxin
Zhang, Yafei
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2006, 6 (12) : 3789 - 3793
[34] Linearity and Dynamic Range of Carbon Nanotube Field-Effect Transistors
Maas, Stephen
2017 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2017, : 87 - 90
[35] The Effects of Hydrogen Annealing on Carbon Nanotube Field-Effect Transistors
Uchino, Takashi
Ayre, Greg N.
Smith, David C.
Hutchison, John L.
de Groot, C. H.
Ashburn, Peter
NANOMATERIALS, 2021, 11 (10)
[36] Role of phonon scattering in carbon nanotube field-effect transistors
Guo, J
Lundstrom, M
APPLIED PHYSICS LETTERS, 2005, 86 (19) : 1 - 3
[37] AC and DC characteristics of carbon nanotube field-effect transistors
Appenzeller, J
PROCEEDING OF THE 2004 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 2004, : 192 - 193
[38] Origin of gate hysteresis in carbon nanotube field-effect transistors
Lee, Joon Sung
Ryu, Sunmin
Yoo, Kwonjae
Choi, Insung S.
Yun, Wan Soo
Kim, Jinhee
JOURNAL OF PHYSICAL CHEMISTRY C, 2007, 111 (34) : 12504 - 12507
[39] Carbon nanotube field-effect transistors - The importance of being small
Knoch, Joachim
Appenzeller, Joerg
AMIWARE: HARDWARE TECHNOLOGY DRIVERS OF AMBIENT INTELLIGENCE, 2006, 5 : 371 - +
[40] Transparent organic field-effect transistors with carbon nanotube electrodes
Southard, Adrian
Sangwan, Vinod Kumar
Williams, Ellen D.
Fuhrer, Michael S.
2007 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, VOLS 1 AND 2, 2007, : 558 - 559

← 1 2 3 4 5 →