Theory and design of field-effect carbon nanotube transistors

被引：0
作者：
Pennington, G [1 ]
Goldsman, N [1 ]
机构：
[1] Univ Maryland, Dept Elect & Comp Engn, College Pk, MD 20742 USA
来源：
2003 IEEE INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES | 2003年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work we study the effects of the application of an electric field perpendicular to the axis of a Carbon nanotube. We find that such a field acts to lower the bandgap, and alter the wavefunctions around the circumference of the tube. We simulate the quantum transport properties of a resonant-tunneling FET as an application of these effects using the Wigner-function formalism. The results of our theoretical model indicate that the current in this device can be effectively manipulated by the gate potential.
引用
收藏
页码：167 / 170
页数：4
相关论文
共 50 条
  • [21] Nonlinear characterization and modeling of carbon nanotube field-effect transistors
    Curutchet, Arnaud
    Theron, Didier
    Werquin, Matthieu
    Ducatteau, Damien
    Happy, Henri
    Dambrine, Gilles
    Bethoux, J. M.
    Derycke, Vincent
    Gaquiere, Christophe
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2008, 56 (07) : 1505 - 1510
  • [22] Carbon nanotube field-effect transistors and logic devices.
    Martel, R
    Derycke, V
    Appenzeller, J
    Wong, PHS
    Avouris, P
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2001, 222 : U184 - U185
  • [23] Hysteresis modeling in ballistic carbon nanotube field-effect transistors
    Liu, Yian
    Moura, Mateus S.
    Costa, Ademir J.
    de Almeida, Luiz Alberto L.
    Paranjape, Makarand
    Fontana, Marcio
    NANOTECHNOLOGY SCIENCE AND APPLICATIONS, 2014, 7 : 55 - 61
  • [24] Sensing with Nafion coated carbon nanotube field-effect transistors
    Star, A
    Han, TR
    Joshi, V
    Stetter, JR
    ELECTROANALYSIS, 2004, 16 (1-2) : 108 - 112
  • [25] A selective electrochemical approach to carbon nanotube field-effect transistors
    Balasubramanian, K
    Sordan, R
    Burghard, M
    Kern, K
    NANO LETTERS, 2004, 4 (05) : 827 - 830
  • [26] High-Performance Carbon Nanotube Field-Effect Transistors
    Shulaker, Max M.
    Pitner, Gregory
    Hills, Gage
    Giachino, Marta
    Wong, H. -S. Philip
    Mitra, Subhasish
    2014 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2014,
  • [27] Numerical Simulation of Ballistic Carbon Nanotube Field-Effect Transistors
    Yaghuti, M.
    Saghafi, K.
    2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1-3, 2008, : 686 - 688
  • [28] Characterization of Radiation Damage in Carbon Nanotube Field-Effect Transistors
    Francis, S. Ashley
    Cress, Cory D.
    McClory, John W.
    Moore, Elizabeth A.
    Petrosky, James C.
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2013, 60 (06) : 4087 - 4093
  • [29] Bacterial Vaginosis Monitoring with Carbon Nanotube Field-Effect Transistors
    Liu, Zhengru
    Bian, Long
    Yeoman, Carl J.
    Clifton, G. Dennis
    Ellington, Joanna E.
    Ellington-Lawrence, Rayne D.
    Borgogna, Joanna-Lynn C.
    Star, Alexander
    ANALYTICAL CHEMISTRY, 2022, 94 (09) : 3849 - 3857
  • [30] Hysteresis-Free Carbon Nanotube Field-Effect Transistors
    Park, Rebecca S.
    Hills, Gage
    Sohn, Joon
    Mitra, Subhasish
    Shulaker, Max M.
    Wong, H. -S. Philip
    ACS NANO, 2017, 11 (05) : 4785 - 4791
12345