Theory and design of field-effect carbon nanotube transistors

被引：0

作者：

Pennington, G ^{[1
]}

Goldsman, N ^{[1
]}

机构：

[1] Univ Maryland, Dept Elect & Comp Engn, College Pk, MD 20742 USA

来源：

2003 IEEE INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES | 2003年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work we study the effects of the application of an electric field perpendicular to the axis of a Carbon nanotube. We find that such a field acts to lower the bandgap, and alter the wavefunctions around the circumference of the tube. We simulate the quantum transport properties of a resonant-tunneling FET as an application of these effects using the Wigner-function formalism. The results of our theoretical model indicate that the current in this device can be effectively manipulated by the gate potential.

引用

页码：167 / 170

页数：4

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