Multi-kV Class β-Ga2O3 MESFETs With a Lateral Figure of Merit Up to 355 MW/cm2

被引：69

作者：

Bhattacharyya, Arkka ^{[1
]}

Ranga, Praneeth ^{[1
]}

Roy, Saurav ^{[1
]}

Peterson, Carl ^{[1
]}

Alema, Fikadu ^{[2
]}

Seryogin, George ^{[2
]}

Osinsky, Andrei ^{[2
]}

Krishnamoorthy, Sriram ^{[1
,3
]}

机构：

[1] Univ Utah, Dept Elect & Comp Engn, Salt Lake City, UT 84112 USA

[2] Agnitron Technol Inc, Chanhassen, MN 55317 USA

[3] Univ Calif Santa Barbara, Mat Dept, Santa Barbara, CA 93106 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2021年 / 42卷 / 09期

关键词：

Ga2O3; MESFETs; MOVPE; regrown contacts; breakdown; kilovolt; lateral figure of merit; passivation; field plates; POWER FIGURE; FIELD; MOSFETS;

D O I：

10.1109/LED.2021.3100802

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate over 3 kV gate-pad-connected field plated (GPFP) beta-Ga2O3 lateral MESFETs with high lateral figures of merit (LFOM) usingmetalorganic vapor phase epitaxy (MOVPE) grown channel layers and regrown ohmic contact layers. Using an improved low-temperature MOVPE selective area epitaxy process, we show that a total contact resistance to the channel as low as 1.4 Omega.mm can be achieved. The GPFP design adopted here using plasma-enhanced chemical vapor deposited (PECVD) SiNx dielectric and SiNx/SiO2 wrap-around passivation exhibits up to similar to 14% improved R-ON, up to similar to 70% improved breakdown voltage (V-BR = V-DS - V-GS) resulting in up to 3x higher LFOM compared to the non-FP beta-Ga2O3 lateral MESFETs. The V-BR (similar to 2.5 kV) and LFOM (355 MW/cm(2)) measured simultaneously in our GPFP beta-Ga2O3 lateral MESFET (with L-GD = 10 mu m) is the highest value achieved in any depletion-mode beta-Ga2O3 lateral device to date.

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页码：1272 / 1275

页数：4

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