AlN and AlGaN materials and devices Preface

被引:0
|
作者
Bickermann, Matthias
Collazo, Ramon
Monroy, Eva
Perlin, Piotr
机构
关键词
Compendex;
D O I
10.1002/pssa.201770155
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页数:1
相关论文
共 50 条
  • [31] Luminescence dynamics in AlGaN with AlN content of 20%
    Soltani, Sonia
    Bouzidi, Mouhamed
    Toure, Alhousseynou
    Gerhard, Marina
    Halidou, Ibrahim
    Chine, Zied
    El Jani, Belgacem
    Shakfa, Mohammad Khaled
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2017, 214 (04):
  • [32] Electrical characterization of AlGaN/GaN on AlN substrates
    Mitchel, W. C.
    Elhamri, S.
    Landis, G.
    Gaska, R.
    Schujman, S. B.
    Schowalter, L. J.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6, 2008, 5 (06): : 1550 - +
  • [33] (Negative) electron affinity of AlN and AlGaN alloys
    Nemanich, RJ
    Benjamin, MC
    Bozeman, SP
    Bremser, MD
    King, SW
    Ward, BL
    Davis, RF
    Chen, B
    Zhang, Z
    Bernholc, J
    GALLIUM NITRIDE AND RELATED MATERIALS, 1996, 395 : 777 - 788
  • [34] Hydride vapor phase epitaxy of AlN and AlGaN
    Koukitu, Akinori
    Kumagai, Yoshinao
    Murakami, Hisashi
    ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES, 2008, 64 : C87 - C88
  • [35] Metastable centers in AlGaN/AlN/GaN heterostructures
    Polyakov, Alexander Y.
    Smirnov, Nick B.
    Govorkov, A. V.
    Kozhukhova, E. A.
    Pearton, Stephen J.
    Ren, Fan
    Karpov, S. Yu.
    Shcherbachev, K. D.
    Kolin, N. G.
    Lim, Wantae
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2012, 30 (04):
  • [36] Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures
    Kaun, Stephen W.
    Burke, Peter G.
    Wong, Man Hoi
    Kyle, Erin C. H.
    Mishra, Umesh K.
    Speck, James S.
    APPLIED PHYSICS LETTERS, 2012, 101 (26)
  • [37] The effect of AlN/AlGaN superlattices on crystal and optical properties of AlGaN epitaxial layers
    Shuo Zhang
    Yun Zhang
    Xiang Chen
    Yanan Guo
    Jianchang Yan
    Junxi Wang
    Jinmin Li
    Journal of Semiconductors, 2017, 38 (11) : 26 - 29
  • [38] Modeling of sheet carrier density and microwave frequency characteristics in Spacer based AlGaN/AlN/GaN HEMT devices
    Mohanbabu, A.
    Anbuselvan, N.
    Mohankumar, N.
    Godwinraj, D.
    Sarkar, C. K.
    SOLID-STATE ELECTRONICS, 2014, 91 : 44 - 52
  • [39] An AlN-based high temperature package for SiC devices: Materials and processing
    Lin, ZG
    Yoon, RJ
    2005 10TH INTERNATIONAL SYMPOSIUM ON ADVANCED PACKAGING MATERIALS: PROCESSES, PROPERTIES AND INTERFACES, 2005, : 156 - 159
  • [40] Deep-ultraviolet emission of AlGaN/AlN quantum wells on bulk AlN
    Gaska, R
    Chen, C
    Yang, J
    Kuokstis, E
    Khan, A
    Tamulaitis, G
    Yilmaz, I
    Shur, MS
    Rojo, JC
    Schowalter, LJ
    APPLIED PHYSICS LETTERS, 2002, 81 (24) : 4658 - 4660