Application of infrared Fourier transform phase-modulated ellipsometry to the characterization of silicon-based amorphous thin films

被引:2
作者
Canillas, A [1 ]
Pascual, E [1 ]
Andujar, JL [1 ]
Campmany, J [1 ]
Bertran, E [1 ]
机构
[1] Univ Barcelona, Dept Fis Aplicada & Elect, E-08028 Barcelona, Spain
关键词
ellipsometry; infrared spectroscopy; amorphous silicon; silicon dioxide; optical properties; structural properties;
D O I
10.1016/S0040-6090(97)00975-9
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Multilayers of silicon-based amorphous thin films were characterized to test the performance of Fourier transform phase-modulated ellipsometry (FTPME) in absolute measurements (thickness and refractive index). The multilayers consist of a stack of silicon dioxide (SiO2), hydrogenated amorphous silicon (a-Si:H) and NiCr thin films on c-Si substrates. Results provided by FTPME are compared with those from UV-visible phase-modulated ellipsometry and transmission electron microscopy. The thicknesses of the layers determined by the three techniques agrees within 3%. Similar volume void fractions of approximately 8% for the silicon dioxide layers are found by UV-visible and IR ellipsometry. (C) 1998 Elsevier Science S.A.
引用
收藏
页码:671 / 675
页数:5
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