Phase-Engineering-Driven Enhanced Electronic and Optoelectronic Performance of Multilayer In2Se3 Nanosheets

被引：64

作者：

Feng, Wei ^{[1
]}

Gao, Feng ^{[2
]}

Hu, Yunxia ^{[2
]}

Dai, Mingjin ^{[2
]}

Liu, He ^{[1
]}

Wang, Lifeng ^{[3
]}

Hu, PingAn ^{[2
]}

机构：

[1] Northeast Forestry Univ, Coll Sci, Dept Chem & Chem Engn, Harbin 150040, Heilongjiang, Peoples R China

[2] Harbin Inst Technol, Key Lab Microsyst & Microstruct, Minist Educ, Harbin 150080, Heilongjiang, Peoples R China

[3] Deakin Univ, Inst Frontier Mat, 75 Pigdons Rd, Geelong, Vic 3216, Australia

来源：

ACS APPLIED MATERIALS & INTERFACES | 2018年 / 10卷 / 33期

基金：

中国国家自然科学基金; 中国博士后科学基金;

关键词：

phase-engineering; In2Se3; field-effect transistors; photodetectors; thermal-annealing; FIELD; MOBILITY; GAS;

D O I：

10.1021/acsami.8b10194

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Here, we report electronic and optoelectronic performance of multilayer In2Se3 are effectively regulated by phase engineering. The electron mobility is increased to 22.8 cm(2) V-1 s(-1) for beta-In2Se3 FETs, which is 18 times higher than 1.26 cm(2) V-1 s(-1) of alpha-In2Se3 FETs. The enhanced electronic performance is attributed to larger carrier sheet density and lower contact resistance. Multilayer beta-In2Se3 photodetector exhibits an ultrahigh responsivity of 8.8 X 10(4) A/W under 800 nm illumination, which is 574 times larger than 154.4 A/W of alpha-In2Se3 photodetector. Our results demonstrate phase-engineering is a valid way to tune and further optimize electronic and optoelectronic performance of multilayer In2Se3 nanodevices.

引用

页码：27584 / 27588

页数：5

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