16kbit HfO2:Si-based 1T-1C FeRAM Arrays Demonstrating High Performance Operation and Solder Reflow Compatibility

被引：21

作者：

Francois, T. ^{[1
,3
]}

Coignus, J. ^{[1
]}

Makosiej, A. ^{[2
]}

Giraud, B. ^{[2
]}

Carabasse, C. ^{[1
]}

Barbot, J. ^{[1
]}

Martin, S. ^{[1
]}

Castellani, N. ^{[1
]}

Magis, T. ^{[1
]}

Grampeix, H. ^{[1
]}

Van Duijn, S. ^{[1
]}

Mounet, C. ^{[1
]}

Chiquet, P. ^{[3
]}

Schroeder, U. ^{[4
]}

Slesazeck, S. ^{[4
]}

Mikolajick, T. ^{[4
,5
]}

Nowak, E. ^{[1
]}

Bocquet, M. ^{[3
]}

Barrett, N. ^{[6
]}

Andrieu, F. ^{[1
]}

Grenouillet, L. ^{[1
]}

机构：

[1] Univ Grenoble Alpes, LETI, CEA, Grenoble, France

[2] Univ Grenoble Alpes, LIST, CEA, Grenoble, France

[3] Aix Marseille Univ, Univ Toulon, CNRS, IM2NP, Marseille, France

[4] NaMLab gGmbH, Dresden, Germany

[5] Tech Univ Dresden, IHM, Dresden, Germany

[6] Univ Paris Saclay, CEA Saclay, CNRS, SPEC,CEA, Gif Sur Yvette, France

来源：

2021 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2021年

关键词：

D O I：

10.1109/IEDM19574.2021.9720640

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

16kbit 1T-1C FeRAM arrays are demonstrated at 130nm node with TiN/HfO2:Si/TiN ferroelectric capacitors integrated in the Back-End-of-Line (BEOL). Zero bit failure is reported at the array level, with memory window fully open down to 2.5V programming voltage, capacitor area down to 0.16 mu m(2) and switching speed down to 4ns. Promising endurance is reported at the array level up to 10(7) cycles. For the first time, solder reflow compatibility is demonstrated for HfO2-based FeRAM. These results pave the way to competitive ultra-low power embedded non-volatile memories at more advanced nodes.

引用

页数：4

共 7 条

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