Scalable quantum computing with ion-implanted dopant atoms in silicon

被引：0

作者：

Morello, A. ^{[1
]}

Tosi, G. ^{[1
]}

Mohiyaddin, F. A. ^{[1
]}

Schmitt, V. ^{[1
]}

Mourik, V. ^{[1
]}

Botzem, T. ^{[1
]}

Laucht, A. ^{[1
]}

Pla, J. J. ^{[1
]}

Tenberg, S. ^{[1
]}

Savytskyy, R. ^{[1
]}

Madzik, M. ^{[1
]}

Hudson, F. ^{[1
]}

Dzurak, A. S. ^{[1
]}

Itoh, K. M. ^{[2
]}

Jakob, A. M. ^{[3
]}

Johnson, B. C. ^{[3
]}

McCallum, J. C. ^{[3
]}

Jamieson, D. N. ^{[3
]}

机构：

[1] UNSW Sydney, Sch Elect Engn & Telecommun, Sydney, NSW, Australia

[2] Keio Univ, Tokyo, Japan

[3] Univ Melbourne, Sch Phys, Melbourne, Vic, Australia

来源：

2018 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2018年

基金：

澳大利亚研究理事会;

关键词：

SPIN QUBIT;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a scalable strategy to manufacture quantum computer devices, by encoding quantum information in the combined electron-nuclear spin state of individual ion-implanted phosphorus dopant atoms in silicon. Our strategy allows a typical pitch between quantum bits of order 200 nm, and retains compatibility with the standard fabrication processes adopted in classical CMOS nano-electronic devices. We theoretically predict fast and high-fidelity quantum logic operations, and present preliminary experimental progress towards the realization of a "flip-flop" qubit system.

引用

页数：4