Lateral coupling -: a material independent way to complex coupled DFB lasers

被引：51

作者：

Kamp, M ^{[1
]}

Hofmann, J ^{[1
]}

Schäfer, F ^{[1
]}

Reinhard, M ^{[1
]}

Fischer, M ^{[1
]}

Bleuel, T ^{[1
]}

Reithmaier, JP ^{[1
]}

Forchel, A ^{[1
]}

机构：

[1] Univ Wurzburg, D-97074 Wurzburg, Germany

来源：

OPTICAL MATERIALS | 2001年 / 17卷 / 1-2期

关键词：

DFB laser; gain coupling; single mode laser; semiconductor laser; laser processing;

D O I：

10.1016/S0925-3467(01)00014-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have developed a new technique for the fabrication of complex coupled distributed feedback laser (DFB) lasers. A metal grating patterned lateral to a narrow ridge waveguide laser couples to the evanescent part of the guided mode. No regrowth is required for the processing, which makes this approach applicable to all material systems. DFB lasers fabricated from InGaAs/AlGaAs quantum well and dot lasers, GaTnNAs DFB lasers emitting at 1.3 mum and long wavelength lasers at 2 mum based on InGaSbAs/AlGaSbAs structures are described. The lasers show low thresholds, good efficiencies and a high sidemode suppression ratio. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：19 / 25

页数：7

共 21 条

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