Magnetic tunnel junctions (MTJs']Js)

被引：6

作者：

Bai, HL ^{[1
]}

Jiang, EY ^{[1
]}

机构：

[1] Tianjin Univ, Dept Appl Phys, Tianjin 300072, Peoples R China

来源：

CHINESE SCIENCE BULLETIN | 2001年 / 46卷 / 09期

关键词：

ferromagnetic metal/insulator/ferromagnetic metal junctions; spin-dependent tunneling; spin polarization; magnetoresistance;

D O I：

10.1007/BF03187205

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

We review the giant tunnel magnetoresistance (TMR) in ferromagnetic-insulator-ferromagnetic junctions discovered in recent years, which is the magnetoresistance (MR) associated with the spin-dependent tunneling between two ferromagnetic metal films separated by an insulating thin tunnel barrier. The theoretical and experimental results including junction conductance, magnetoresistance and their temperature and bias dependences are described.

引用

页码：709 / 716

页数：8

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