STUDYING PHOTOCURRENTS IN α-Sn/Ge QW BY TERAHERTZ TIME-RESOLVED SPECTROSCOPY

被引:0
|
作者
Trukhin, V. N. [1 ]
Mustafin, I. A. [1 ]
Kusmartsev, F., V [2 ,3 ]
Kusmartseva, A. [2 ]
Liu, Y. [3 ]
Zhang, B. [3 ]
Luo, Y. [3 ]
机构
[1] Ioffe Inst, St Petersburg 19021, Russia
[2] Loughborough Univ, Dept Phys, Loughborough, Leics, England
[3] MTRC, Nanofabricat Lab, Hong Kong, Peoples R China
来源
2022 47TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER AND TERAHERTZ WAVES (IRMMW-THZ 2022) | 2022年
基金
俄罗斯基础研究基金会;
关键词
D O I
10.1109/IRMMW-THz50927.2022.9895467
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Generation of a terahertz radiation in alpha-Sn / Ge quantum wells by ultrashort laser pulses is studied. Existence of the alpha-Sn at room temperature is shown by Raman spectroscopy. Cardinal differences were found in the parameters of THz pulses generated in samples with quantum wells widths of 4 nm, 6 nm sign and in nanostructures with quantum wells widths of 8.5 nm, 10 nm. The observed changes in the polarization dependences of the electric field of the THz radiation generated in alpha-Sn/Ge nanostructures with changes in the width of quantum well going from 6 nm to 8.5 nm are associated with the transition from a normal band structure to an inverted one in these nanostructures.
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页数:2
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