Cross sectional evaluation of boron doping and defect distribution in homoepitaxial diamond layers

被引：6

作者：

Araujo, Daniel ^{[1
]}

Paz Alegre, M. A. ^{[1
]}

Garcia, Antonio J. ^{[1
]}

Pilar Villar, M. ^{[1
]}

Bustarret, Etienne ^{[2
,3
]}

Achatz, Philipp ^{[2
,3
]}

Volpe, Pierre N. ^{[2
,3
]}

Omnes, Franck ^{[2
,3
]}

机构：

[1] Univ Cadiz, Dpto Ciencia Mat, Cadiz 11510, Spain

[2] CNRS, Inst Neel, F-38041 Grenoble, France

[3] UJF, F-38041 Grenoble, France

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 4 | 2011年 / 8卷 / 04期

关键词：

homoepitaxial diamond; boron-doped; TEM; HAADF; CL;

D O I：

10.1002/pssc.201083991

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In some diamond-based semiconducting devices, large variations of doping level are required over short distances. Tools to determine doping level and defects distribution should therefore be developed. The present contribution shows the capabilities of electron microscopy in this field. Focused ion beam (FIB-dual beam) cross section preparations allowed evaluating doping level in highly boron doped sample with doping transition down to some nm by diffraction contrast mode of transmission electron microscopy (CTEM) and by high angle annular dark field mode of scanning transmission electron microscopy (HAADF-STEM). The sensibility of the latter is around 10(19)cm(-3) and, thus, cathodo-luminescence (CL) is required for lower doping levels. Cross sectional analysis on FIB prepared lamella allowed to separate the epilayer behaviour from that of the substrate. Mid-gap centers involving boron, hydrogen and, for some peaks, also nitrogen are revealed. sp(2) bonds are also present in the grown epilayer. These transitions make difficult the observation of excitonic recombinations in the cross section configuration. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1366 / 1370

页数：5

共 11 条

[1] Local boron doping quantification in homoepitaxial diamond structures [J].

Araujo, D. ;

Achatz, P. ;

El Bouayadi, R. ;

Garcia, A. J. ;

Alegre, M. P. ;

Villar, M. P. ;

Jomard, F. ;

Bustarret, E. .

[2] Unlocking diamond's potential as an electronic material [J].

Balmer, R. S. ;

Friel, I. ;

Woollard, S. M. ;

Wort, C. J. H. ;

Scarsbrook, G. A. ;

Coe, S. E. ;

El-Hajj, H. ;

Kaiser, A. ;

Denisenko, A. ;

Kohn, E. ;

Isberg, J. .

PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 2008, 366 (1863) :251-265

[3] Determination of the phosphorus content in diamond using cathodoluminescence spectroscopy [J].

Barjon, J. ;

Desfonds, P. ;

Pinault, M.-A. ;

Kociniewski, T. ;

Jomard, F. ;

Chevallier, J. .

JOURNAL OF APPLIED PHYSICS, 2007, 101 (11)

[4] Highly and heavily boron doped diamond films [J].

Deneuville, A. ;

Baron, C. ;

Ghodbane, S. ;

Agnes, C. .

[5] RELATIVISTIC HARTREE-FOCK X-RAY AND ELECTRON SCATTERING FACTORS [J].

DOYLE, PA ;

TURNER, PS .

ACTA CRYSTALLOGRAPHICA SECTION A-CRYSTAL PHYSICS DIFFRACTION THEORETICAL AND GENERAL CRYSTALLOGRAPHY, 1968, A 24 :390-&

[6] EXCITONIC RECOMBINATION RADIATION IN UNDOPED AND BORON-DOPED CHEMICAL-VAPOR-DEPOSITED DIAMONDS [J].

KAWARADA, H ;

MATSUYAMA, H ;

YOKOTA, Y ;

SOGI, T ;

YAMAGUCHI, A ;

HIRAKI, A .

PHYSICAL REVIEW B, 1993, 47 (07) :3633-3637

[7] Metal-insulator transition and superconductivity in boron-doped diamond [J].

Klein, T. ;

Achatz, P. ;

Kacmarcik, J. ;

Marcenat, C. ;

Gustafsson, F. ;

Marcus, J. ;

Bustarret, E. ;

Pernot, J. ;

Omnes, F. ;

Sernelius, Bo E. ;

Persson, C. ;

da Silva, A. Ferreira ;

Cytermann, C. .

PHYSICAL REVIEW B, 2007, 75 (16)

[8] Concepts for diamond electronics [J].

Kohn, Erhard ;

Denisenko, Andrej .

THIN SOLID FILMS, 2007, 515 (10) :4333-4339

[9] Imaging of high-angle annular dark-field scanning transmission electron microscopy and observations of GaN-based violet laser diodes [J].

Shiojiri, M. ;

Saijo, H. .

JOURNAL OF MICROSCOPY, 2006, 223 :172-178

[10]

Williams D. B., 1996, TRANSMISSION ELECT M, VII, P205

← 1 2 →