Design and Performance of a High Frequency Silicon Carbide Inverter

被引：0

作者：

Shen, Miaosen ^{[1
]}

Krishnamurthy, Shashank ^{[1
]}

Mudholkar, Mihir ^{[2
]}

机构：

[1] United Technol Res Ctr, Power Elect Grp, E Hartford, CT 06108 USA

[2] Univ Arkansas, Elect Engn Dept, Fayetteville, AR 72701 USA

来源：

2011 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE) | 2011年

关键词：

silicon carbide; three phase inverter; high frequency;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The advantages offered by wide band gap materials enable the design of converters with high power density for high performance applications. This paper presents the design and test results for a high frequency (400kHz) hard switched two level silicon carbide based three phase inverter. Using device and system parasitic models, the losses in the converter are predicted and validated using experimental tests. A calorimetric setup is utilized to accurately measure the performance of the inverter and efficiencies of 91% are obtained at a load of 4kVA and a switching frequency of 400kHz.

引用

页码：2044 / 2049

页数：6

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