Dimer configurations of 3C-SiC(001) Si-terminated surface

被引：0
|
作者：
Kitamura, J
Hara, S
Okushi, H
Yoshida, S
Misawa, S
Kajimura, K
机构：
来源：
REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY, HOSEI UNIVERSITY, SUPPLEMENT NO 15, MARCH 1997 | 1997年
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We present atomic-resolution images of 3C-SiC(001)-c(4x2) Si-terminated surface obtained by scanning tunneling microscopy (STM). It is found that a crystallographic basis of the c(4x2) reconstruction consists of the up parallel dimer and a down parallel dimer. We propose an inter-dimer buckling model, which is consistent with structural features obtained by the STM images. We also observed a p(2x2) reconstruction with small areas on the same samples where the c(4x2) phase is dominant. The observed p(2x2) structure is also consistent with the inter-dimer buckling model.
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页码：55 / 58
页数：4
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