MoO2 Sacrificial Layer for Optimizing Back Contact Interface of Cu2ZnSn(S,Se)4 Solar Cells

被引：23

作者：

Xu, Bin ^{[1
]}

Lu, Xiaoshuang ^{[1
]}

Ma, Chuanhe ^{[1
]}

Liu, Yulin ^{[1
]}

Qi, Ruijuan ^{[1
]}

Huang, Rong ^{[1
]}

Chen, Ye ^{[1
]}

Yang, Pingxiong ^{[1
]}

Chu, Junhao ^{[1
,2
]}

Sun, Lin ^{[1
]}

机构：

[1] East China Normal Univ, Dept Elect, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China

[2] Chinese Acad Sci, Natl Lab Infrared Phys, Shanghai Inst Tech Phys, Shanghai 200083, Peoples R China

来源：

IEEE JOURNAL OF PHOTOVOLTAICS | 2020年 / 10卷 / 04期

基金：

中国国家自然科学基金;

关键词：

Back contact interface; Cu2ZnSn(S; Se)(4) solar cells; MoO2 thin film; preannealing; sacrificial layer; ELECTRONIC-STRUCTURE; EFFICIENCIES; ABSORBER; IMPACT; OXIDE;

D O I：

10.1109/JPHOTOV.2020.2987165

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The conversion efficiency of Cu2ZnSn(S,Se)(4) (CZTSSe) solar cells is relatively low, due to the complicated intrinsic defects and the unsuitable contact interfaces. In this work, MoO2 thin films prepared by a simple preannealing method are introduced to Mo/CZTSSe back contact interface. For the first time, it is found that MoO2 acts as a sacrificial layer rather than the traditional intermediate layer. Specifically, the MoO2 sacrificial layer will disappear and become a thin MoSe2 layer after it blocks the over-selenization of Mo electrode. In addition, it has a positive effect on the preferred orientation of MoSe2 and the crystallization of CZTSSe layer. Furthermore, the chemical mechanism on MoO2 as sacrificial layer is first investigated, and it can be well described by Van 't Hoff equation. With the aid of MoO2 sacrificial layer, the performance of CZTSSe device increases from 5.67% to 8.29% (active area efficiency is 9.08%) without the MgF2 antireflection layer.

引用

页码：1191 / 1200

页数：10

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