Super Critical Fluid Technique to Enhance Current Output on Amorphous Silicon-Based Photovoltaic

被引:12
作者
Chen, Hsin-Lu [1 ]
Chen, Po-Hsun [2 ]
Chang, Ting-Chang [2 ,3 ]
Young, Tai-Fa [1 ]
Wang, Min-Chuan [4 ]
Ai, Chi-Fong [4 ]
Tsai, Tsung-Ming [5 ]
Chang, Kuan-Chang [6 ]
Chen, Min-Chen [2 ]
Su, Yu-Ting [2 ]
Yang, Chih-Cheng [5 ]
Lin, Chun-Chu [5 ]
机构
[1] Natl Sun Yat Sen Univ, Dept Mech & Electromech Engn, Kaohsiung 80424, Taiwan
[2] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 80424, Taiwan
[3] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 701, Taiwan
[4] Atom Energy Council, Inst Nucl Energy Res, Taoyuan 32546, Taiwan
[5] Natl Sun Yat Sen Univ, Dept Mat & Optoelect Sci, Kaohsiung 80424, Taiwan
[6] Peking Univ, Dept Sch Elect & Comp Engn, Shenzhen 518055, Peoples R China
关键词
Supercritical fluid; photovoltaic; defect; DLCP; SUPERCRITICAL CO2; SOLAR-CELLS; RESISTANCE; EXTRACTION; MEMORY; FILMS;
D O I
10.1109/LED.2017.2747096
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A low temperature, non-destructive treatment technique with supercritical carbon dioxide mixing water was demonstrated on thin film type photovoltaic devices to enhance current output. Assembled P-I-N amorphous Si-based devices were treated in a high pressure reaction chamber. Generation of light current under indoor illumination was improved by about 80% after treatment. To clarify the origin of improvement, the drive-level capacity profiling method with capacitance-voltage (C-V) measurement was used, as it shows the relationship between defect density and location. Such measurements reveal that the amount of interface defects was significantly reduced after treatment. A dynamic reaction model was also proposed to explain the defect passivation reaction. This technique can be effectively applied to amorphous silicon solar cell devices to enhance performance.
引用
收藏
页码:1401 / 1404
页数:4
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