High extraction efficiency InGaN micro-ring light-emitting diodes

被引：105

作者：

Choi, HW ^{[1
]}

Dawson, MD

Edwards, PR

Martin, RW

机构：

[1] Univ Strathclyde, Inst Photon, Glasgow G4 0NW, Lanark, Scotland

[2] Univ Strathclyde, Dept Phys, Glasgow G4 0NG, Lanark, Scotland

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 22期

关键词：

D O I：

10.1063/1.1630352

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Light-emitting diodes (LEDs) based on an interconnected array of GaN/InGaN micro-ring elements have been demonstrated. The devices have electrical characteristics similar to those of conventional broad-area devices. However, due to the large surface areas provided by the sidewalls, the extraction efficiency is greatly enhanced. Intense light emission at the periphery of the micro-rings is observed upon excitation by an electron beam, suggesting scattering of the photons which are extracted through the sidewalls. The devices provide a doubling in total light output compared to a broad-area reference LED of equal light-generation area. (C) 2003 American Institute of Physics.

引用

页码：4483 / 4485

页数：3

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