Three-Dimensional Organic Field-Effect Transistors Using Solution-Processed Thin Films of Benzothieno-Benzothiophene Derivatives

被引：0

作者：

Li, Wanyan ^{[1
,2
]}

Uno, Mayumi ^{[2
]}

Hirose, Yuri ^{[2
]}

Uemura, Takafumi ^{[2
]}

Takimiya, Kazuo ^{[3
]}

Takeya, Jun ^{[2
]}

机构：

[1] Technol Res Inst Osaka Prefecture, Izumi Ku, Osaka 5941157, Japan

[2] Osaka Univ, Inst Sci & Ind Res, Osaka, Japan

[3] Hiroshima Univ, Grad Sch Appl Chem, Hiroshima, Japan

来源：

MOLECULAR CRYSTALS AND LIQUID CRYSTALS | 2011年 / 539卷

关键词：

Organic field-effect transistor; organic semiconductor; solution process; three-dimensional transistor; vertical transistor; PERFORMANCE;

D O I：

10.1080/15421406.2011.566055

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Organic field-effect transistors utilizing solution-processed benzothieno-benzothiophene is developed using a three-dimensional field-effect transistor structure, which comprises multiple vertical channels to enhance their output drain current. The soluble benzothieno-benzothiophene thin films were formed on vertical channels using different solvents, and the mobility is estimated to be 3.7x10-3cm2/Vs. Nevertheless, extremely large values of channel width divided by length enables current amplification up to 0.7mA per device area of 1cm2, even with the low carrier mobility. The result demonstrates the usefulness of the three-dimensional structure to produce high output currents for device applications.

引用

页码：58 / 62

页数：5

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