Quality and reliability assessment of Cu pillar bumps for fine pitch applications

被引:0
作者
Jerhaoui, Othmane
Moreau, Stephane [1 ]
Bouchu, David
Romero, Gilles
Marseilhan, Denis
Mourier, Thierry
Garnier, Arnaud
机构
[1] Univ Grenoble Alpes, F-38000 Grenoble, France
来源
2017 IEEE 67TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC 2017) | 2017年
关键词
Cu pillar bumps; 2.5D/3D packaging; interposer; reliability; shear strength; reflow; intermetallic compounds; IMC; STRENGTH;
D O I
10.1109/ECTC.2017.36
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents the relations between processing, microstructure and mechanical reliability of copper pillar bumps (CuPi). Two sets of samples were manufactured: Cu/SnAg and Cu/Ni/SnAg with diameters between 15 and 20 mu m. From the microstructure point of view: at these dimensions and for simulated reflows, up to 5, intermetallic compounds (IMC) follow a classical power law with a time exponent value between 1/3 and 1/2 indicating the interfacial IMC growth is grain boundary/volume diffusion-controlled. Adding a Ni layer limits micro-voids and IMC growth (similar to 2-3 mu m wo. Ni vs. similar to 1 mu m w. Ni). From the mechanical/reliability point of view: the more reflow, the tougher the Cu pillar bumps. With 5 reflows, the pillar bump is a minima 74 % tougher for a Cu/SnAg one and 19 % for a Cu/Ni/SnAg one. At the investigated shear heights, the fracture is always in the solder without any apparent impact of IMC growth.
引用
收藏
页码:1210 / 1218
页数:9
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