An anomalously high Seebeck coefficient and power factor in ultrathin Bi2Te3 film: Spin-orbit interaction

被引:40
作者
Ahmad, Mujeeb [1 ]
Agarwal, Khushboo [1 ]
Mehta, B. R. [1 ]
机构
[1] Indian Inst Technol Delhi, Dept Phys, Thin Film Lab, New Delhi 110016, India
关键词
CHEMICAL SPRAY-PYROLYSIS; THIN-FILMS; THERMOELECTRIC PROPERTIES; TOPOLOGICAL INSULATOR; PHONON-SCATTERING; GRAIN-SIZE; TRANSPORT; XPS; THERMOPOWER; NANOSHEETS;
D O I
10.1063/5.0007440
中图分类号
O59 [应用物理学];
学科分类号
摘要
The present study reports a strong thickness-dependence and anomalously large enhancement in the values of the Seebeck coefficient and electrical conductivity in Bi2Te3 films at ultralow thickness. An opposite sign of the Hall coefficient (negative) and Seebeck coefficient (positive) is observed in an ultrathin Bi2Te3 film (65nm) as compared to the normally observed identical sign in the case of Bi2Te3 thin films (520nm). A simultaneous enhancement in the values of electrical conductivity and the Seebeck coefficient results in a giant enhancement in the value of power factor from 1.86mW/mK(2) to 18.0mW/mK(2) at 416K, with a reduction in thickness. X-ray photoelectron spectroscopy investigation reveals the absence of any significant change in stoichiometry and chemical bonding upon reduction of thickness. Magnetoresistance vs magnetic field data show a sharp dip at the lower magnetic field values, indicating a weak antilocalization effect in the case of the ultrathin film sample suggesting the role of strong spin-orbit coupling toward the carrier filtering effect resulting in enhancement of thermoelectric properties. Observation of the large Seebeck coefficient and the power factor at lower thickness values and its relationship with spin-orbit coupling is an important result, both for practical applications and for better understanding of the thermoelectric properties.
引用
收藏
页数:9
相关论文
共 84 条
[1]   Simultaneous improvement in electron transport and phonon scattering properties in Bi2Te3:Si nanocomposite thin films: Role of a conducting secondary phase [J].
Agarwal, Khushboo ;
Varandani, Deepak ;
Mehta, B. R. .
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 698 :1058-1065
[2]   Structural, electrical, and thermoelectric properties of bismuth telluride: Silicon/carbon nanocomposites thin films [J].
Agarwal, Khushboo ;
Mehta, B. R. .
JOURNAL OF APPLIED PHYSICS, 2014, 116 (08)
[3]   Large surface charge accumulation in 2D MoS2/Sb2Te3 junction and its effect on junction properties: KPFM based study [J].
Ahmad, Mujeeb ;
Varandani, Deepak ;
Mehta, B. R. .
APPLIED PHYSICS LETTERS, 2018, 113 (14)
[4]   KPFM based investigation on the nature of Sb2Te3:MoS2 and Bi2Te3:MoS2 2D interfaces and its effect on the electrical and thermoelectric properties [J].
Ahmad, Mujeeb ;
Agarwal, Khushboo ;
Kumari, Navnita ;
Mehta, B. R. .
APPLIED PHYSICS LETTERS, 2017, 111 (02)
[5]   EFFECTS OF ELECTRON-ELECTRON COLLISIONS WITH SMALL ENERGY TRANSFERS ON QUANTUM LOCALIZATION [J].
ALTSHULER, BL ;
ARONOV, AG ;
KHMELNITSKY, DE .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (36) :7367-7386
[6]   Electrochemical corrosion and materials properties of reactively sputtered TiN/TiAlN multilayer coatings [J].
Ananthakumar, R. ;
Subramanian, B. ;
Kobayashi, Akira ;
Jayachandran, M. .
CERAMICS INTERNATIONAL, 2012, 38 (01) :477-485
[7]   Growth, Structure, and Electronic Properties of Epitaxial Bismuth Telluride Topological Insulator Films on BaF2 (111) Substrates [J].
Caha, O. ;
Dubroka, A. ;
Humlicek, J. ;
Holy, V. ;
Steiner, H. ;
Ul-Hassan, M. ;
Sanchez-Barriga, J. ;
Rader, O. ;
Stanislavchuk, T. N. ;
Sirenko, A. A. ;
Bauer, G. ;
Springholz, G. .
CRYSTAL GROWTH & DESIGN, 2013, 13 (08) :3365-3373
[8]   Weak Antilocalization in Bi2(SexTe1-x)3 Nanoribbons and Nanoplates [J].
Cha, Judy J. ;
Kong, Desheng ;
Hong, Seung-Sae ;
Analytis, James G. ;
Lai, Keji ;
Cui, Yi .
NANO LETTERS, 2012, 12 (02) :1107-1111
[9]  
Chem J. M., 2012, J MATER CHEM, V22, P4921, DOI [10.1039/c2jm15973b, DOI 10.1039/C2JM15973B]
[10]   Gate-Voltage Control of Chemical Potential and Weak Antilocalization in Bi2Se3 [J].
Chen, J. ;
Qin, H. J. ;
Yang, F. ;
Liu, J. ;
Guan, T. ;
Qu, F. M. ;
Zhang, G. H. ;
Shi, J. R. ;
Xie, X. C. ;
Yang, C. L. ;
Wu, K. H. ;
Li, Y. Q. ;
Lu, L. .
PHYSICAL REVIEW LETTERS, 2010, 105 (17)