Spontaneous emission control of single quantum dots in bottom-up nanowire waveguides

被引：76

作者：

Bulgarini, Gabriele ^{[1
]}

Reimer, Michael E. ^{[1
]}

Zehender, Tilman ^{[2
]}

Hocevar, Moira ^{[1
]}

Bakkers, Erik P. A. M. ^{[1
,2
]}

Kouwenhoven, Leo P. ^{[1
]}

Zwiller, Valery ^{[1
]}

机构：

[1] Delft Univ Technol, Kavli Inst Nanosci, Delft, Netherlands

[2] Eindhoven Univ Technol, NL-5600 MB Eindhoven, Netherlands

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 12期

基金：

欧洲研究理事会;

关键词：

annealing; atomic layer deposition; beryllium compounds; conduction bands; high-k dielectric thin films; multiphoton processes; photoemission; valence bands; X-ray photoelectron spectra; PHOTONIC CRYSTALS;

D O I：

10.1063/1.3694935

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nanowire waveguides with controlled shape are promising for engineering the collection efficiency of quantum light sources. We investigate the exciton lifetime in individual InAsP quantum dots, perfectly positioned on-axis of InP nanowire waveguides. We demonstrate control over the quantum dot spontaneous emission by varying the nanowire diameter in e-beam patterned arrays, which modifies the coupling efficiency of the emitter to the fundamental waveguide mode. The spontaneous emission rate is inhibited by a factor of 12 in thin nanowires compared to nanowires with optimized waveguide diameter. From the measured inhibition factor, we determine a high radiative yield exceeding 92% in bottom-up grown nanowires. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3694935]

引用

页数：4

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