High-Q silica microcavities on a chip: From microtoroid to microsphere

被引：26

作者：

Jager, J. -B. ^{[1
]}

Calvo, V. ^{[1
]}

Delamadeleine, E. ^{[1
]}

Hadji, E. ^{[1
]}

Noe, P. ^{[1
]}

Ricart, T. ^{[2
]}

Bucci, D. ^{[3
]}

Morand, A. ^{[3
]}

机构：

[1] MINATEC, INAC, SP2M, UMR CEA UJF Grenoble 1, F-38054 Grenoble, France

[2] SCMS LCMA, MINATEC Campus, CEA, LETI, F-38054 Grenoble, France

[3] Univ Savoie, MINATEC, IMEP LAHC, UJF,INP,UMR 5130, F-38016 Grenoble 1, France

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 18期

关键词：

RICH OXIDE;

D O I：

10.1063/1.3658389

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the realization of high-quality silica optical microcavities on a chip. We show that a precise control of radii of both silica disk and silicon pillar defines the shape of molten microresonators from microtoroids to microspheres. These last ones advantageously combine small mode volumes in structures of very small radii (5 < r < 14 mu m) which are fully compatible to wafer-based processing. The optical quality-factor of silica microsphere on a chip is as high as 7.5 x 10(7) at 1.55 mu m. The losses sources in these microspheres are detailed and we show that measured quality-factors are limited by the radiative losses for the smallest ones. (C) 2011 American Institute of Physics. [doi:10.1063/1.3658389]

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页数：3

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