Characteristics of light-emitting electrochemical devices M/MEH-PPV+TBATS/ITO (where M=Al, Cu, Au and TBATS=tetrabutylammonium p-toluenesulfonate) are reported. Light emission is observed in forward and reverse bias modes in each device. Characteristics of light-emitting devices having the configurations, Al/MEH-PPV/ITO, Al/MEH-PPV/EB/ITO and Al/EB/MEH-PPV/EB/ITO have been studied. Light emission is observed in forward bias only for the first device but in forward and reverse bias modes for the latter two devices. Operation in an AC mode is also observed. Doped conducting EB is also used in the fabrication of LEDs.