Dynamics of optically-injected semiconductor nanolasers

被引：0
|
作者：
Sarraute, J. -M. [1 ,2 ]
Schires, K. [1 ]
LaRochelle, S. [2 ]
Grillot, F. [1 ,3 ]
机构：
[1] Univ Paris Saclay, Telecom Paristech, CNRS LTCI, 46 Rue Barrault, F-75013 Paris, France
[2] Univ Laval, COPL, 2375 Rue Terrasse,Local 2104, Quebec City, PQ G1V 0A6, Canada
[3] Univ New Mexico, Ctr High Technol Mat, 1313 Goddard SE, Albuquerque, NM 87131 USA
来源：
PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES XXIV | 2016年 / 9742卷
关键词：
Semiconductor lasers; injection-locking; modulation response; Purcell effect; MODULATION BANDWIDTH;
D O I：
10.1117/12.2214492
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We propose a novel rate equation model of an optically-injected semiconductor nanolaser based on an expression of the complex electric field including a novel spontaneous emission term. The latter takes into account the amplification of the zero-point energy of the field as well as the Purcell effect. The modulation response of the optically injection-locked nanolaser is studied for the first time using a small-signal analysis of the model. We then investigate the injection map of the nanolaser and study the 3-dB bandwidth of the nanolaser inside the locking region.
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页数：9
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