High-Power Waveguide Integrated Modified Uni-Traveling-Carrier (UTC) Photodiode with 5 dBm RF Output Power at 120 GHz

被引：0

作者：

Zhou, Gan ^{[1
]}

Ebert, Willi ^{[1
]}

Mutschall, Sven ^{[1
]}

Seeger, Angela ^{[1
]}

Runge, Patrick ^{[1
]}

Li, Qinglong ^{[2
]}

Beling, Andreas ^{[2
]}

机构：

[1] Fraunhofer Heinrich Hertz Inst, Einsteinufer 37, D-10587 Berlin, Germany

[2] Univ Virginia, Dept Elect & Comp Engn, Charlottesville, VA 22904 USA

来源：

2016 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION (OFC) | 2016年

关键词：

PERFORMANCE;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrated a monolithic InP-based high-power high-speed waveguide integrated modified UTC photodetector. The chip delivers maximum RF output power levels of 8.9dBm to 5.1dBm in the frequency range between 60GHz and 120GHz.

引用

页数：3

共 8 条

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