Tunable double epsilon-near-zero behavior in niobium oxynitride thin films

被引：2

作者：

Bower, Ryan ^{[1
]}

Wells, Matthew P. ^{[2
]}

Johnson, Freya ^{[3
]}

Kilmurray, Rebecca ^{[1
]}

Doiron, Brock ^{[3
]}

Cali, Eleonora ^{[1
]}

Mallia, Giuseppe ^{[4
]}

Zou, Bin ^{[1
]}

Mihai, Andrei P. ^{[1
]}

Harrison, Nicholas M. ^{[4
]}

Fearn, Sarah ^{[1
]}

Oulton, Rupert ^{[3
]}

Alford, Neil McN. ^{[1
]}

Cohen, Lesley F. ^{[3
]}

Petrov, Peter K. ^{[1
]}

机构：

[1] Imperial Coll London, Royal Sch Mines, Dept Mat, Exhibit Rd, London SW7 2AZ, England

[2] Univ Cambridge, Dept Mat Sci & Met, 27 Charles Babbage Rd, Cambridge CB3 0FS, England

[3] Imperial Coll London, Dept Phys, Blackett Lab, Exhibit Rd, London SW7 2AZ, England

[4] Imperial Coll London, Dept Chem, Mol Sci Res Hub, White City Campus,80 Wood Lane, London W12 0BZ, England

来源：

APPLIED SURFACE SCIENCE | 2021年 / 569卷

基金：

英国工程与自然科学研究理事会;

关键词：

Plasmonics; Epsilon-near-zero; Transition metal nitrides; Sputtering; ALTERNATIVE PLASMONIC MATERIALS; OPTICAL-PROPERTIES; MECHANICAL-PROPERTIES; PHOTONICS; NITRIDES; THERAPY; GROWTH;

D O I：

10.1016/j.apsusc.2021.150912

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Refractory transition metal nitrides and oxynitrides are of interest for plasmonic applications due to their increased thermal stability, tunability and comparatively low loss. Presented here is an experimental investigation of reactively sputtered niobium oxynitride thin films, demonstrating screened plasma wavelengths tunable over a similar to 90 nm spectral range. The optical response is correlated with resistivity and Hall measurements. Additionally, an explanation is provided for the double epsilon-near-zero (2ENZ) behavior observed and it is compared with other material systems. Experimental analysis of film composition and structure are combined with computational modelling, based on density functional theory, to explain the dispersion behavior observed and indicate that 2ENZ behavior arises due to the incorporation of oxygen within the films during deposition.

引用

页数：7

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