Barium titanate-based capacitors buried into ceramic substrates

被引：12

作者：

Chen, LS ^{[1
]}

Fu, SL ^{[1
]}

Huang, KD ^{[1
]}

机构：

[1] I Shou Univ, Dept Elect Engn, Kaohsiung, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1998年 / 37卷 / 10B期

关键词：

low temperature; cordierite; barium titanate; cofired; capacitor;

D O I：

10.1143/JJAP.37.L1241

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Burying passive components into the multilayer ceramic substrate can offer increased circuit surface area for IC. With the addition of LiF, nonstoichiometric barium titanate BaTi0.975O3 can be well densified after sintering at the temperature less than 1000 degrees C. From X-ray diffraction pattern, barium titanate is the main existing crystalline structure. Dielectric constant about 1050 with the dissipation factor 2.3% was obtained for BaTi0.975O3 + 2 Wt% LiF embedded capacitor sintered at 900 degrees C.

引用

页码：L1241 / L1243

页数：3

共 11 条

[1]

Amin R.B., 1978, U. S. Pat, Patent No. 4082906

[2] HIGH-RELIABILITY INTERNAL CAPACITOR OF LTCC [J].

BABA, Y ;

OCHI, H ;

SEGAWA, S .

IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY PART A, 1995, 18 (01) :170-173

[3] FLUX-SINTERED BATIO3 DIELECTRICS [J].

BURN, I .

JOURNAL OF MATERIALS SCIENCE, 1982, 17 (05) :1398-1408

[4]

DESGARDIN G, 1985, AM CERAM SOC BULL, V64, P564

[5]

DROZDYK L, 1993, P 26 INT S MICR ISHM, P209

[6]

DRUE KH, 1997, ADV MICROELECTRONICS, V24, P23

[7]

FU SL, 1996, MICROELECTRON INT, V39, P20

[8]

GUHA JP, 1986, J AM CERAM SOC, V69, pC193, DOI 10.1111/j.1151-2916.1986.tb04837.x

[9] BARIUM-TITANATE PEROVSKITE SINTERED WITH LITHIUM-FLUORIDE [J].

HAUSSONNE, JM ;

DESGARDIN, G ;

BAJOLET, P ;

RAVEAU, B .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1983, 66 (11) :801-807

[10]

OCHI H, 1995, P INT MICR C 1995, P304

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