Effect of ion-beam parameters on in-plane texture of yttria-stabilized zirconia thin films

被引:4
作者
Truchan, TG [1 ]
Chudzik, MP [1 ]
Fisher, BL [1 ]
Erck, RA [1 ]
Goretta, KC [1 ]
Balachandran, U [1 ]
机构
[1] Argonne Natl Lab, Div Energy Technol, Argonne, IL 60439 USA
关键词
biaxial texture; IBAD; coated conductors;
D O I
10.1109/77.919814
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Biaxially textured thin films of 8-mole%-yttria-stabilized zirconia (YSZ) were deposited by ion-beam-assisted deposition (IBAD) on polished Hastelloy-C tapes. These films serve as epitaxial template layers for highly textured Y-Ba-Cu-O superconductor thin films. YSZ films were deposited to a gross thickness of approximate to1.6 pm by electron beam evaporation. A 300-eV Ar/10% O-2 ion beam bombarded the substrate at an off-normal angle during deposition. The ion-to-atom arrival ratio (r-value) was varied by independently adjusting the deposition rate and the ion current density. X-ray pole figures and phi scans were used to investigate in-plane texture. Profilometry and spectral reflectivity H ere utilized to measure the net film thickness. A two-dimensional texture/thickness contour map was generated and used to optimize the in-plane texture of the YSZ and to minimize processing time.
引用
收藏
页码:3485 / 3488
页数:4
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