IMPROVEMENT OF MINORITY-CARRIER LIFETIME IN GaAsN GROWN BY CHEMICAL BEAM EPITAXY

被引：7
|
作者：
Honda, T. [1 ]
Inagaki, M. [1 ]
Suzuki, H.
Kojima, N. [1 ]
Ohshita, Y. [1 ]
Yamaguchi, M. [1 ]
机构：
[1] Toyota Technol Inst, Nagoya, Aichi 468, Japan
来源：
35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE | 2010年
关键词：
GAINNAS;
D O I：
10.1109/PVSC.2010.5616424
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Minority-carrier lifetime (electron) in p-type GaAsN film is improved by chemical beam epitaxy (CBE) and thermal annealing. Growth rate (GR) in CBE is an important factor to improve minority-carrier lifetime in bulk (tau(B)). For as-grown samples, tau(B) is increased from 3.2 x 10(2) ps (GR = 2 mu m/h) to 9.0 x 10(2) ps (GR = 0.4 mu m/h). The obtained tau(B) is much longer than the minority-carrier lifetime (similar to 10(1) ps) predicted by the reported carrier diffusion length and mobility. This improvement is due to the increase of nonradiative recombination lifetime (tau(NR)) caused by the decrease of nonradiative recombination centers. By thermal annealing, PL lifetime (tau(PL)) is increased. Therefore, CBE and thermal annealing have a high possibility to obtain the minority-carrier lifetime required to solar cells (> 1 ns).
引用
收藏
页码：2053 / 2056
页数：4
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