IMPROVEMENT OF MINORITY-CARRIER LIFETIME IN GaAsN GROWN BY CHEMICAL BEAM EPITAXY

被引：7
|
作者：
Honda, T. [1 ]
Inagaki, M. [1 ]
Suzuki, H.
Kojima, N. [1 ]
Ohshita, Y. [1 ]
Yamaguchi, M. [1 ]
机构：
[1] Toyota Technol Inst, Nagoya, Aichi 468, Japan
来源：
35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE | 2010年
关键词：
GAINNAS;
D O I：
10.1109/PVSC.2010.5616424
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Minority-carrier lifetime (electron) in p-type GaAsN film is improved by chemical beam epitaxy (CBE) and thermal annealing. Growth rate (GR) in CBE is an important factor to improve minority-carrier lifetime in bulk (tau(B)). For as-grown samples, tau(B) is increased from 3.2 x 10(2) ps (GR = 2 mu m/h) to 9.0 x 10(2) ps (GR = 0.4 mu m/h). The obtained tau(B) is much longer than the minority-carrier lifetime (similar to 10(1) ps) predicted by the reported carrier diffusion length and mobility. This improvement is due to the increase of nonradiative recombination lifetime (tau(NR)) caused by the decrease of nonradiative recombination centers. By thermal annealing, PL lifetime (tau(PL)) is increased. Therefore, CBE and thermal annealing have a high possibility to obtain the minority-carrier lifetime required to solar cells (> 1 ns).
引用
收藏
页码：2053 / 2056
页数：4
相关论文
共 50 条
  • [21] MINORITY-CARRIER LIFETIME IMPROVEMENT BY GETTERING IN SI1-XGEX
    LOSADA, BR
    MOEHLECKE, A
    LAGOS, R
    LUQUE, A
    APPLIED PHYSICS LETTERS, 1995, 67 (13) : 1894 - 1895
  • [22] MINORITY-CARRIER LIFETIME MAPPING IN THE SEM
    STECKENBORN, A
    JOURNAL OF MICROSCOPY-OXFORD, 1980, 118 (MAR): : 297 - 302
  • [23] MINORITY-CARRIER LIFETIME IN POLYCRYSTALLINE SEMICONDUCTORS
    KUMAR, KR
    SATYAM, M
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 77 (02): : 467 - 470
  • [24] MINORITY-CARRIER LIFETIME OF GAAS ON SILICON
    AHRENKIEL, RK
    ALJASSIM, MM
    DUNLAVY, DJ
    JONES, KM
    VERNON, SM
    TOBIN, SP
    HAVEN, VE
    CONFERENCE RECORD OF THE TWENTIETH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1988, VOLS 1-2, 1988, : 684 - 688
  • [25] Improvement of minority-carrier lifetime in tin monosulfide via substrate engineering
    Chakraborty, Rupak
    Steinmann, Vera
    Hempel, Marek
    Rekemeyer, Paul
    Ofori-Okai, Benjamin K.
    Hartman, Katy
    Youssef, Amanda
    Akey, Austin
    Nelson, Keith A.
    Gradecak, Silvija
    Kong, Jing
    Buonassisi, Tonio
    2016 IEEE 43RD PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), 2016, : 415 - 418
  • [26] APPARATUS FOR MEASUREMENT OF MINORITY-CARRIER LIFETIME
    PANOV, AY
    SAMOKHVALOV, MK
    INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 1986, 29 (06) : 1442 - 1444
  • [27] MINORITY-CARRIER LIFETIME IN INAS EPILAYERS
    WIEDER, HH
    COLLINS, DA
    APPLIED PHYSICS LETTERS, 1974, 25 (12) : 742 - 743
  • [28] Reduction of residual carbon in GaAsN films grown by chemical beam epitaxy
    Suzuki, Hidetoshi
    Nishimura, Kenichi
    Lee, Hae-Seok
    Saito, Kenji
    Kawalhigashi, Tetsuya
    Imai, Takahlro
    Ohshita, Yoshio
    Yamaguchi, Masafumi
    CONFERENCE RECORD OF THE 2006 IEEE 4TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS 1 AND 2, 2006, : 819 - 822
  • [29] MINORITY-CARRIER LIFETIME IMPROVEMENT IN SILICON THROUGH LASER DAMAGE GETTERING
    YANG, KH
    SCHWUTTKE, GH
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 58 (01): : 127 - 134
  • [30] Effect of Low Growth Rate in Chemical Beam Epitaxy on Carrier Mobility and Lifetime of p-GaAsN Films
    Honda, Takahiko
    Ikeda, Kazuma
    Inagaki, Makoto
    Suzuki, Hidetoshi
    Kojima, Nobuaki
    Ohshita, Yoshio
    Yamaguchi, Masafumi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (08)
12345