Evaluating root cause: The distinct roles of hydrogen and firing in activating light- and elevated temperature-induced degradation

被引：58

作者：

Jensen, M. A. ^{[1
]}

Zuschlag, A. ^{[2
]}

Wieghold, S. ^{[1
]}

Skorka, D. ^{[2
]}

Morishige, A. E. ^{[1
]}

Hahn, G. ^{[2
]}

Buonassisi, T. ^{[1
]}

机构：

[1] MIT, Dept Mech Engn, Cambridge, MA 02139 USA

[2] Univ Konstanz, Dept Phys, D-78457 Constance, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2018年 / 124卷 / 08期

基金：

美国国家科学基金会;

关键词：

INDUCED LIFETIME DEGRADATION; CARRIER-INDUCED DEGRADATION; SILICON; COMPLEXES; PASSIVATION; KINETICS; SPECTROSCOPY; SOLUBILITY; LAYERS;

D O I：

10.1063/1.5041756

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The root cause of light- and elevated temperature-induced degradation (LeTID) in multicrystalline silicon p-type passivated emitter and rear cell (PERC) devices is still unknown. Microwave induced remote hydrogen plasma (MIRHP) is employed to vary the concentration of bulk hydrogen and to separate the effects of hydrogen and firing temperature in LeTID-affected wafers. We find that hydrogen is required for degradation to occur, and that samples fired prior to the introduction of hydrogen do not degrade. Importantly, samples with hydrogen that have not been fired do degrade, implying that the firing time-temperature profile does not cause LeTID. Together, these results suggest that the LeTID defect reaction consists of at least two reactants: hydrogen and one or more defects that can be separately modified by high-temperature firing. We assess the leading hypotheses for LeTID in the context of our new understanding of the necessary reactants. Published by AIP Publishing.

引用

页数：8

共 37 条

[1] Possible Candidates for Impurities in mc-Si Wafers Responsible for Light-Induced Lifetime Degradation and Regeneration [J].