Influence of post-annealing treatment on the structure properties of ZnO films

被引:355
作者
Fang, ZB
Yan, ZJ
Tan, YS
Liu, XQ
Wang, YY [1 ]
机构
[1] Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China
[2] Shaoxing Univ, Dept Phys, Shaoxing 312000, Peoples R China
基金
中国国家自然科学基金;
关键词
ZnO films; rf reactive sputtering; annealing; microstructure;
D O I
10.1016/j.apsusc.2004.07.056
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Highly oriented polycrystalline ZnO films were deposited on Si substrate by rf reactive sputtering technique. X-ray diffraction (XRD), atomic force microscope (AFM) and the refractive index were employed to analyze the influence of the post-annealing treatment on the structural properties of ZnO thin films. It has been found that the grain size of ZnO thin films increases with increasing the annealing temperature, the shift of the diffraction peak position from its normal powder value was observed. AFM analysis shows that the surface roughness of ZnO films is very low at temperature between 250 and 600degreesC. The packing density investigation shows ZnO films can obtain high packing densities (above 0.973) in the annealing temperature rang from 450 to 600degreesC. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:303 / 308
页数:6
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