A Reflection Type Phase Shifter for Reconfigurable Reflectarrays at 240 GHz

被引：4
|
作者：
Kunakovskaya, Ekaterina [1 ]
Ulusoy, A. Cagri [1 ]
机构：
[1] Karlsruhe Inst Technol, Inst Radio Frequency Engn & Elect, Karlsruhe, Germany
来源：
2021 IEEE RADIO AND WIRELESS SYMPOSIUM (RWS) | 2021年
关键词：
millimeter wave integrated circuits; phase shifters; silicon germanium; heterojunction bipolar transistors; switches; phased arrays;
D O I：
10.1109/RWS50353.2021.9360389
中图分类号：
TN [电子技术、通信技术];
学科分类号：
0809 ;
摘要：
In this work, a high frequency reflection-type phase shifter implemented in 0.13 mu m SiGe HBT technology is presented. It is based on a single-pole single-throw switch topology, utilizing HBTs in reverse-saturation. The phase shifter achieves a return loss of -2.8/-2.5 dB for a phase control of 90.4 degrees at 240 GHz, respectively. The power consumption is 6.8 mW during the ON state. The phase-shifter test structure was fabricated and the measured results show a good agreement with the simulations.
引用
收藏
页码：161 / 163
页数：3
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