A Reflection Type Phase Shifter for Reconfigurable Reflectarrays at 240 GHz

被引：5

作者：

Kunakovskaya, Ekaterina ^{[1
]}

Ulusoy, A. Cagri ^{[1
]}

机构：

[1] Karlsruhe Inst Technol, Inst Radio Frequency Engn & Elect, Karlsruhe, Germany

来源：

2021 IEEE RADIO AND WIRELESS SYMPOSIUM (RWS) | 2021年

关键词：

millimeter wave integrated circuits; phase shifters; silicon germanium; heterojunction bipolar transistors; switches; phased arrays;

D O I：

10.1109/RWS50353.2021.9360389

中图分类号：

TN [电子技术、通信技术];

学科分类号：

0809 ;

摘要：

In this work, a high frequency reflection-type phase shifter implemented in 0.13 mu m SiGe HBT technology is presented. It is based on a single-pole single-throw switch topology, utilizing HBTs in reverse-saturation. The phase shifter achieves a return loss of -2.8/-2.5 dB for a phase control of 90.4 degrees at 240 GHz, respectively. The power consumption is 6.8 mW during the ON state. The phase-shifter test structure was fabricated and the measured results show a good agreement with the simulations.

引用

页码：161 / 163

页数：3

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