3D Free-Form Patterning of Silicon by Ion Implantation, Silicon Deposition, and Selective Silicon Etching

被引：34

作者：

Fischer, Andreas C. ^{[1
]}

Belova, Lyubov M. ^{[2
]}

Rikers, Yuri G. M. ^{[3
]}

Malm, B. Gunnar ^{[4
]}

Radamson, Henry H. ^{[4
]}

Kolahdouz, Mohammadreza ^{[4
]}

Gylfason, Kristinn B. ^{[1
]}

Stemme, Goran ^{[1
]}

Niklaus, Frank ^{[1
]}

机构：

[1] KTH Royal Inst Technol, Microsyst Technol Lab, S-10044 Stockholm, Sweden

[2] KTH Royal Inst Technol, Engn Mat Phys Lab, S-10044 Stockholm, Sweden

[3] FEI Electron Opt, NL-5600 KA Eindhoven, Netherlands

[4] KTH Royal Inst Technol, S-16440 Kista, Sweden

来源：

ADVANCED FUNCTIONAL MATERIALS | 2012年 / 22卷 / 19期

基金：

欧洲研究理事会;

关键词：

microelectromechanical systems; nanostructures; additive layer-by-layer fabrication; 3D silicon patterning; focused ion beam (FIB) implantation; BEAM; MICROFABRICATION; NANOSTRUCTURES; FABRICATION; BORON;

D O I：

10.1002/adfm.201200845

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A method for additive layer-by-layer fabrication of arbitrarily shaped 3D silicon micro- and nanostructures is reported. The fabrication is based on alternating steps of chemical vapor deposition of silicon and local implantation of gallium ions by focused ion beam (FIB) writing. In a final step, the defined 3D structures are formed by etching the silicon in potassium hydroxide (KOH), in which the local ion implantation provides the etching selectivity. The method is demonstrated by fabricating 3D structures made of two and three silicon layers, including suspended beams that are 40 nm thick, 500 nm wide, and 4 mu m long, and patterned lines that are 33 nm wide.

引用

页码：4004 / 4008

页数：5

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