High-performance n-type organic field-effect transistor with poly(4-vinyl phenol) as gate dielectric

被引：0

作者：

Sung, C. F. ^{[1
]}

Lee, Y. Z. ^{[1
]}

Cheng, K. ^{[1
]}

Chu, C. W. ^{[1
]}

机构：

[1] Ind Technol Res Inst, Hsinchu 310, Taiwan

来源：

IDW '06: PROCEEDINGS OF THE 13TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3 | 2006年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have fabricated organic thin-film transistors (OTFTs) based on a [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) with cross-linked poly-4-vinyl phenol (CPVP) as gate dielectric. Better performance is observed compared to the device fabricated with SiO2. The PCBM thin-film transistor with cross-linked PVP dielectric exhibits a mobility of 0.0132 cm(2) V-1 s(-1), an I-on/I-off ratio of 10(5), and a sub-threshold swing of 0.87 Vdecade(-1). This solution process with excellent dielectric property leads to an achievement of high electron mobility in OTFTs.

引用

页码：1695 / 1697

页数：3

共 14 条

[1] Ambipolar organic field-effect transistors based on a solution-processed methanofullerene [J].