Electronic states and the light-induced metastability in hydrogenated amorphous silicon prepared by hot-wire CVD

被引：2

作者：

Han, DX ^{[1
]}

Yue, GZ

Habuchi, H

Iwaniczko, E

Wang, Q

机构：

[1] Univ N Carolina, Dept Phys & Astron, Chapel Hill, NC 27599 USA

[2] Figu Natl Coll Technol, Gifu 5010495, Japan

[3] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

THIN SOLID FILMS | 2001年 / 395卷 / 1-2期

关键词：

electronic states; metastability; hydrogenated amorphous silicon;

D O I：

10.1016/S0040-6090(01)01235-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We found that the improved structural order in hydrogenated amorphous silicon (a-Si:H) deposited by hot-wire chemical vapor deposition (HW-CVD) does not result in narrowing of the electronic band tail density of states. However, the features of light-induced effects are different from those in glow-discharge (GD-CVD) films. Upon light-soaking, (a) the photoconductivity (PC) does not change significantly, and (b) the Fermi level position moves up rather than down in most samples. These results are discussed in the context of possible defect complexes existing in an inhomogeneous network. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：134 / 137

页数：4