Ferroelectric-gated MoSe2 photodetectors with high photoresponsivity

Ferroelectric transistors with semiconductors as the channel material and ferroelectrics as the gate insulator have potential applications in nanoelectronics. We report in-situ modulation of optoelectronic properties of MoSe2 thin flakes on ferroelectric 0.7PbMg(1/3)Nb(2/3)O(3)-0.3PbTiO(3) (PMN-PT). Under the excitation of 638 nm laser, the photoresponsivity can be greatly boosted to 59.8 A W-1 and the detectivity to 3.2 x 10(10) Jones, with the improvement rates of about 1500% and 450%, respectively. These results suggest hybrid structure photodetector of two-dimensional layered material and ferroelectric has great application prospects in photoelectric detector.