Electrochemical deposition of cerium on porous silicon to improve photoluminescence properties

被引：15

作者：

Atyaoui, Malek ^{[1
]}

Dimassi, Wissem ^{[1
]}

Monther, Ghrib ^{[1
]}

Chtourou, Radhouane ^{[1
]}

Ezzaouia, Hatem ^{[1
]}

机构：

[1] Ctr Rech & Technol Energie, Lab Photovolta, Hammam Lif 2050, Tunisia

来源：

JOURNAL OF LUMINESCENCE | 2012年 / 132卷 / 02期

关键词：

Porous silicon (PS); Cerium (Ce); FTIR; AFM; XRD; Photoluminescence (PL); LUMINESCENCE DEGRADATION; OPTICAL-PROPERTIES; ENHANCEMENT; EFFICIENCY; ELECTROLUMINESCENCE; BIOSENSOR; SURFACE; DEVICE;

D O I：

10.1016/j.jlumin.2011.08.043

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this work, we present results for Cerium (Ce) doping effects on photoluminescence (PL) properties of porous silicon (PS). Cerium was deposited using electrochemical deposition on porous silicon prepared by electrochemical anodization of P-type (100) Si. From the photoluminescence spectroscopy, it was shown that porous silicon treated with cerium can lead to an increase of photoluminescence when they are irradiated by light compared to the porous silicon layer without cerium. In order to understand the contribution of cerium to the enhanced photoluminescence, energy dispersive X-ray (EDX) spectroscopy, Fourier transmission infrared spectroscopy (FTIR), X-ray diffraction (XRD) and atomic force microscopy (AFM) were performed, and it was shown that the improved photoluminescence may be attributed to the change of Si-H bonds into Si-O-Ce bonds and to a newly formed PS layer during electrochemical Ce coating. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：277 / 281

页数：5

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