The influence of Rh surface doping on anomalous properties of thick-film SnO2 gas sensors

被引：36

作者：

Licznerski, BW ^{[1
]}

Nitsch, K ^{[1
]}

Teterycz, H ^{[1
]}

Wisniewski, K ^{[1
]}

机构：

[1] Wroclaw Tech Univ, Inst Microsyst Technol, PL-50370 Wroclaw, Poland

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 2001年 / 79卷 / 2-3期

关键词：

thick-film; gas sensor; tin dioxide; platinum; rhodium; impedance spectroscopy;

D O I：

10.1016/S0925-4005(01)00862-0

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

Here there are presented new results from the investigations of SnO2 thick-film sensor. The effects of rhodium surface doping on de and ac properties of SnO2 gas sensors were studied. The measurements reveal anomalous behaviour of the sensors. Below characteristic temperature, the resistance of the sensors increases in presence of reducting gases. The mechanism associated with the presence of rhodium can be connected with the increase of acceptor surface states concentration and causes the inversion of near-surface layers. (C) 2001 Elsevier Science BN. All rights reserved.

引用

页码：157 / 162

页数：6

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