Flexible MoS2 Field-Effect Transistors for Gate-Tunable Piezoresistive Strain Sensors

被引：130

作者：

Tsai, Meng-Yen ^{[1
]}

Tarasov, Alexey ^{[1
]}

Hesabi, Zohreh R. ^{[1
]}

Taghinejad, Hossein ^{[2
]}

Campbell, Philip M. ^{[1
]}

Joiner, Corey A. ^{[1
]}

Adibi, Ali ^{[2
]}

Vogel, Eric M. ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA

[2] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

来源：

ACS APPLIED MATERIALS & INTERFACES | 2015年 / 7卷 / 23期

基金：

瑞士国家科学基金会; 美国国家科学基金会;

关键词：

wafer-scale MoS2; transition metal dichalcogenide; TMDC; field-effect transistor; flexible electronics; piezoresistive strain sensing; gauge factor; MOLYBDENUM-DISULFIDE TRANSISTORS; THIN-FILM TRANSISTORS; LAYER MOS2; HIGH-PERFORMANCE; MONOLAYER; UNIFORM;

D O I：

10.1021/acsami.5b02336

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Atomically thin Molybdenum disulfide (MoS2) is a promising two-dimensional semiconductor for high-performance flexible electronics, sensors, transducers, and energy conversion. Here, piezoresistive strain sensing with flexible MoS2 field-effect transistors (FETs) made from highly uniform large-area films is demonstrated. The origin of the piezoresistivity in MoS2 is the strain-induced band gap change, which is confirmed by optical reflection spectroscopy. In addition, the sensitivity to strain can be tuned by more than 1 order of magnitude by adjusting the Fermi level via gate biasing.

引用

页码：12850 / 12855

页数：6

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