Photocurrent and Persistent Photoconductivity in Zinc Oxide Thin-Film Transistors under Ultraviolet-Light Irradiation

被引：14

作者：

Furuta, Mamoru ^{[1
]}

Kamada, Yudai ^{[2
]}

Kimura, Mutsumi ^{[3
]}

Shimakawa, Shin-ichi ^{[1
]}

Kawaharamura, Toshiyuki ^{[1
]}

Wang, Dapeng ^{[1
]}

Li, Chaoyang ^{[1
]}

Fujita, Shizuo ^{[2
]}

Hirao, Takashi ^{[1
]}

机构：

[1] Kochi Univ Technol, Inst Nanotechnol, Kami, Kochi 7828502, Japan

[2] Kyoto Univ, Grad Sch Engn, Kyoto 6158520, Japan

[3] Ryukoku Univ, Dept Elect & Informat, Otsu, Shiga 5202194, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2011年 / 50卷 / 11期

基金：

日本学术振兴会;

关键词：

D O I：

10.1143/JJAP.50.110204

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The photocurrent and photoconductive decay of the bottom-gate zinc oxide thin-film transistors (ZnO TFTs) under ultraviolet (UV) light irradiation were investigated. A light-shield was formed on the TFTs to generate photoexcited carriers in a limited portion of the channel. It was found that the UV-light irradiated portion in the channel influenced not only the photocurrent but also the photoconductive decay of the ZnO TFTs. On the basis of the experimental and device simulation results, it is safe to say that the positive charges accumulated near the source region play a key role in determining both the photocurrent and photoconductive decay of the ZnO TFTs. (C) 2011 The Japan Society of Applied Physics

引用

页数：3

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