Structural, optical and electronic structure studies of Al doped ZnO thin films

被引：47

作者：

Devi, Vanita ^{[1
]}

Kumar, Manish ^{[2
]}

Shukla, D. K. ^{[2
]}

Choudhary, R. J. ^{[2
]}

Phase, D. M. ^{[2
]}

Kumar, Ravindra ^{[1
]}

Joshi, B. C. ^{[1
]}

机构：

[1] Jaypee Inst Informat Technol, Dept Phys & Mat Sci & Engn, Noida 201307, India

[2] UGC DAE Consortium Sci Res, Indore 452001, India

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2015年 / 83卷

关键词：

ZnO; PLD; AFM; UV-visible; XPS; PULSED-LASER DEPOSITION; SUBSTRATE-TEMPERATURE; III-NITRIDES; GROWTH; PLD;

D O I：

10.1016/j.spmi.2015.03.047

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Structural, optical and electronic structure of Al doped ZnO thin films grown using pulsed laser deposition on glass substrate are investigated. X-ray diffraction measurements reveal that all the films are textured along the c-axis and have wurtzite structure. Al doping in ZnO films leads to increase in grain size due to relaxation in compressive stress. Enhancement in band gap of ZnO films with the Al doping is also noticed which can be ascribed to the Brustein-Moss shift. The changes in the electronic structure caused by Al in the doped thin film samples are understood through X-ray absorption measurements. (C) 2015 Elsevier Ltd. All rights reserved.

引用

页码：431 / 438

页数：8

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