Electrothermal Atomic-Force Microscope Cantilever With Integrated Heater and n-p-n Back-to-Back Diodes

被引：4

作者：

Fletcher, Patrick C. ^{[1
]}

Bhatia, Bikramjit S. ^{[1
]}

Wu, Yan ^{[1
]}

Shannon, Mark A. ^{[1
]}

King, William P. ^{[1
]}

机构：

[1] Univ Illinois, Dept Mech Sci & Engn, Urbana, IL 61801 USA

来源：

JOURNAL OF MICROELECTROMECHANICAL SYSTEMS | 2011年 / 20卷 / 03期

基金：

美国国家科学基金会;

关键词：

Atomic-force microscope (AFM); cantilever; diode; electrothermal (ET); scanning probe microscopy; ELECTRICAL CHARACTERIZATION; SILICON; LITHOGRAPHY; OXIDATION; MASKLESS; DOMAINS; CARRIER; SURFACE; FILMS; OXIDE;

D O I：

10.1109/JMEMS.2011.2127455

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports the integration of both electrical and thermal elements into the free end of an atomic-force microscope cantilever, where the electrode and heater-thermometer are electrically isolated by an NPN semiconductor back-to-back diode. The electrothermal cantilever can be self heated using an integrated solid-state heater to more than 600 degrees C. The tip voltage can be measured or controlled independent of the tip temperature, either in the direct or the alternating current mode. To our knowledge, this setup is the first microcantilever to have a solid-state junction and heater integrated near a scanning probe tip. [2010-0276]

引用

页码：644 / 653

页数：10

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