In-situ characterization of Ga2O passivation of In0.53Ga0.47As prior to high-k dielectric atomic layer deposition

被引：14

作者：

Milojevic, M. ^{[1
]}

Contreras-Guerrero, R. ^{[1
]}

O'Connor, E. ^{[2
]}

Brennan, B. ^{[1
]}

Hurley, P. K. ^{[2
]}

Kim, J. ^{[1
]}

Hinkle, C. L. ^{[1
]}

Wallace, R. M. ^{[1
]}

机构：

[1] Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA

[2] Univ Coll Cork, Tyndall Natl Inst, Cork, Ireland

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 04期

基金：

爱尔兰科学基金会; 美国国家科学基金会;

关键词：

GAAS; SEMICONDUCTOR; SUBSTRATE; OXIDATION; IMPACT; STATES;

D O I：

10.1063/1.3615666

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ga2O interfacial passivation layers (IPLs) on In0.53Ga0.47As are investigated using in-situ monochromatic x-ray photoelectron spectroscopy. The oxide is entirely composed of Ga2O when deposited with an effusion cell temperature of 1500 degrees C and substrate temperature of 425 degrees C. The growth on In0.53Ga0.47As reveals slight chemical modification of the surface. The Ga2O behavior and ability to protect the III-V surface are observed following Al2O3 deposition by atomic layer deposition following each precursor pulse. Al2O3 growth by trimethyl-Al (TMA) and water reveals that the IPL undergoes the "clean-up" effect following TMA exposures causing As-As bonding formation resulting in a high interface state density. (C) 2011 American Institute of Physics. [doi:10.1063/1.3615666]

引用

页数：3

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